Susbstrate material for mounting a semiconductor device,...

Details Susbstrate material for mounting a semiconductor device,... Susbstrate material for mounting a semiconductor device,...

2005-12-13

2005-12-13

Jenkins, Daniel (Department: 1742)

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Metal and nonmetal in final product

C419S026000, C419S038000

Reexamination Certificate

active

06974558

ABSTRACT:
To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

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