Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-08-26
2011-11-08
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000
Reexamination Certificate
active
08053894
ABSTRACT:
Apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.
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Lei Ming-Ta
Lin Cheng-Chung
Lin Chia-Hui
Lin Yih-Hsiung
Liu Ai-Sen
Slater & Matsil L.L.P.
Smith Bradley K
Taiwan Semiconductor Manufacturing Company , Ltd.
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