Surface treatment of low-k SiOF to prevent metal interaction

Details Surface treatment of low-k SiOF to prevent metal interaction Surface treatment of low-k SiOF to prevent metal interaction

1998-09-18

1999-11-30

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257764, 257915, 257760, H01L 23522, H01L 23532

Patent

active

059947780

ABSTRACT:
A method for using low dielective SiOF in a process to manufacture semiconductor products, comprising the steps of: obtaining a layer of SiOF; and depleting fluorine from a surface of the SiOF layer. In a preferred embodiment, the depleting step comprises the step of treating the surface of the layer of SiOF with a plasma containing hydrogen. It is further preferred that the treated surface be passivated. The invention also encompasses a semiconductor chip comprising an integrated circuit with at least a first and second layers, and with a dielective layer of SiOF disposed between the layers, wherein the SiOF dielective layer includes a first region at one edge thereof which is depleted of fluorine to a predetermined depth.

REFERENCES:
patent: 5703404 (1997-12-01), Matsuura
patent: 5753975 (1998-05-01), Matsuno
patent: 5789315 (1998-08-01), Besser et al.

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