Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-10-12
1994-08-02
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
252 792, 252 794, 156651, 156664, H01L 2100
Patent
active
053342844
ABSTRACT:
A surface (30) of a wafer of indium phosphide (22) is treated by first etching the surface (30) with an aqueous solution of nitric acid and ceric ammonium nitrate. A toughening solution of about 4 parts by volume of acetic acid, about 4 parts by volume nitric acid, and about 1 part by volume hydrobromic acid is prepared and mixed. The roughening solution is contacted to the etched surface (30) of the wafer of indium phosphide (22) for about 15 to about 30 seconds to roughen the surface of the indium phosphide. Reaction products may be removed from the surface in aqueous hydrofluoric solution, and metal may be deposited upon the toughened surface in a strongly adhering layer (28).
REFERENCES:
"Local Etching of Indium Phosphide In Anisotropic Etchants"; 1985; abstract only; Izv. Akad. Nauk SSSR, Neorg, Mater., 21(8).
"Investigations of Etched Channels on Indium Phosphide And Gallium Arsenide Substrates"; 1985; abstract only; Latv. PSR Zinat. Akad. Vestis, Fiz Teh. Zinat Ser. (5).
"Observation of Etch Pits Produced in InP By New Etchants", K. Akita, et al., pp. 783-787, Journal of Crystal Growth 46 (1979).
Breneman R. Bruce
Denson-Low W. K.
Duraiswamy V. D.
Goudreau George
Hughes Aircraft Company
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