Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-07
2006-02-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S679000
Reexamination Certificate
active
06995088
ABSTRACT:
The present invention provides, in one embodiment, a method of forming a copper layer (100) over a semiconductor substrate (105). The method comprises coating a copper seed layer (110) located over a semiconductor substrate with a protective agent (120) to form a protective layer (125). The method also includes placing the semiconductor substrate in an acid bath (145) to remove the protective layer. The method further includes electrochemically depositing a second copper layer (155) on the copper seed layer. Such methods and resulting conductive structures thereof may be advantageously used in methods to manufacture integrated circuits comprising copper interconnects.
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J.M. Bastidas, et al.; “Copper Corrosion Mechanism in the Presence of Formic Acid Vapor for Short Exposure Times”; Journal of The Electrochemical Society, 147 (3); pp. 999-1005.
E. Cano, et al; “Study of the Effect of Acetic Acid Vapor on Copper Corrosion at 40 and 80 % Relative Humidity”; Journal of The Electrochemical Society, 148 (11); pp. B431-B437.
Aggarwal Sanjeev
Hall Lindsey
Hurd Trace Q.
Brady III W. James
McLarty Peter K.
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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