Surface treatment and passivation of AlGaN/GaN HEMT

Details Surface treatment and passivation of AlGaN/GaN HEMT Surface treatment and passivation of AlGaN/GaN HEMT

2007-11-20

2011-11-22

Arora, Ajay K (Department: 2892)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including contaminant removal or mitigation

C438S465000, C438S038000, C438S958000, C257S626000, C257SE23132

Reexamination Certificate

active

08062931

ABSTRACT:
In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination with cleaning of the in-situ SiN before gate deposition and before deposition of the second passivation layer.

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