Surface treating method

Details Surface treating method Surface treating method

2005-02-01

2005-02-01

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C134S037000, C250S43200R

Reexamination Certificate

active

06849192

ABSTRACT:
There is provided a method for surface treating where the environmental load is small. The surface treating method of the invention comprises that a cluster bonded by the first molecule and the second molecule by means of an intermolecular force is produced in a gas phase. At least a part of internal energy released in producing the cluster is utilized whereby the first molecule contained in the cluster is made in a state having higher reactivity than that of the first molecular not bonded with the second molecular. The surface of the member to be treated is treated in a gas phase with the cluster containing the first molecule made in a state of higher reactivity.

REFERENCES:
patent: 5459326 (1995-10-01), Yamada
patent: 5796111 (1998-08-01), Mahoney
patent: 6413583 (2002-07-01), Moghadam et al.
patent: 5-7869 (1993-01-01), None
patent: 10-137704 (1998-05-01), None
Bach et al., “Nature of the Transition Structure for Oxygen Atom Transfer from a Hydroperoxide. Theoretical Comparison Between Water Oxide and Ammonia Oxide,” J. Am. Chem. Soc., 113:6001-11 (1991).

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