Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1995-06-14
1999-11-02
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117213, 65 33, 65DIG8, 4273762, C30B 3500
Patent
active
059762470
ABSTRACT:
A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process. The first substantially devitrified silica layer is such that it promotes uniform dissolution of the inner surface and in so doing significantly reduces the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material. The second substantially devitrified silica layer is such that it reinforces the vitreous silica body.
REFERENCES:
patent: 3240568 (1966-03-01), Derby et al.
patent: 3508894 (1970-04-01), Torok
patent: 3645812 (1972-02-01), Sussmann
patent: 3772134 (1973-11-01), Rau
patent: 3776809 (1973-12-01), Baumler et al.
patent: 4010064 (1977-03-01), Patrick et al.
patent: 4028093 (1977-06-01), Banker et al.
patent: 4028124 (1977-06-01), Bihuniak et al.
patent: 4047966 (1977-09-01), Bihuniak et al.
patent: 4102666 (1978-07-01), Baumler et al.
patent: 4104045 (1978-08-01), Mansmann
patent: 4268483 (1981-05-01), Davey et al.
patent: 4336048 (1982-06-01), Van der Steen et al.
patent: 4416680 (1983-11-01), Bruning
patent: 4429009 (1984-01-01), Pastor et al.
patent: 4935046 (1990-06-01), Uchikawa et al.
patent: 4956208 (1990-09-01), Uchikawa et al.
patent: 5053359 (1991-10-01), Loxley et al.
patent: 5174801 (1992-12-01), Matsumura et al.
patent: 5196173 (1993-03-01), Arai et al.
Pamplin, B. "Crystal Growth," Pergamon Press, 2nd edition, 1980, pp. 275-278.
P.S. Ravishankar "Liquid Encapsulated Bridgman (LEB) Method For Directional Solidification of Silicon Using Calcium Chloride" Journal of Crystal Growth, vol. 94 (1989) pp. 62-68.
Allen Leon A.
Drafall Larry E.
Hansen Richard L.
Holder John D.
McCutchan Robert M.
Garrett Felisa
MEMC Electronic Materials , Inc.
LandOfFree
Surface-treated crucibles for improved zero dislocation performa does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface-treated crucibles for improved zero dislocation performa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface-treated crucibles for improved zero dislocation performa will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2129330