Surface processing apparatus utilizing microwave plasma

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204192E, 204164, 156345, 118620, 422186, C23C 1500, C23F 100

Patent

active

043393268

ABSTRACT:
There is provided an apparatus for processing a surface of an object to be processed by utilizing microwave plasma within a plasma-producing chamber, which comprises a microwave power-generating means; a wave guide for transmitting microwaves generated from said microwave power-generating means; a closed vessel constituting the plasma-producing chamber separated from said wave guide by a separating means; an antenna for transmitting microwaves, one end thereof protruding into the wave guide and another end thereof protruding into the closed vessel and a supporting means, for holding or supporting the electroconductive object to be processed, provided within the closed vessel and so attached to the antenna that the antenna and the electroconductive object may be electrically connected to each other.

REFERENCES:
patent: 4265730 (1981-05-01), Hirose et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Surface processing apparatus utilizing microwave plasma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Surface processing apparatus utilizing microwave plasma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface processing apparatus utilizing microwave plasma will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-202863

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.