Surface polishing of silicon carbide electronic device substrate

Details Surface polishing of silicon carbide electronic device substrate Surface polishing of silicon carbide electronic device substrate

1995-04-18

1998-05-12

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

438492, 438690, 438931, 438959, 438974, H01L 21306

Patent

active

057504342

ABSTRACT:
A silicon carbide substrate is dry-polished using chromium oxide Cr.sub.2 O.sub.3, ion oxide Fe.sub.2 O.sub.3, or cerium oxide CeO.sub.2 to obtain a good polished surface free of mechanical defects and with less crystal distortion. Films are then formed on the surface to create an improved electronic device.

REFERENCES:
patent: 4875083 (1989-10-01), Palmour
patent: 4912063 (1990-03-01), Davis et al.
patent: 4994139 (1991-02-01), Biermann et al.
patent: 5011549 (1991-04-01), Kong et al.
patent: 5032203 (1991-07-01), Doy et al.
patent: 5061972 (1991-10-01), Edmond
patent: 5248385 (1993-09-01), Powell
patent: 5270252 (1993-12-01), Papanicolaou
patent: 5272107 (1993-12-01), Suzuki et al.
patent: 5319220 (1994-06-01), Suzuki et al.
patent: 5363800 (1994-11-01), Larkin et al.
Suzuki et al, "C-V Characteristics of SiC Metal-Oxide-Semiconductor Diode with a Thermally Grown SiO.sub.2 Layer", Appl. Phys. Lett. 39(1), 1 Jul. 1981, p. 89.
"Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures", Kuroda, Naotaka et al., Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo 1987, pp. 227-230.
"Mechanochemical Polishing of Single-Crystal Silicon Carbide", Kikuchi, Masao et al., The Corrected Papers for the 1990 Autumn Scientific Lecture Meeting; pp. 327-328.
M. Kikuchi et al. "Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium (III) Oxide Abrasive." Journal of the American Ceramics Society, 75(1), (1992) pp. 189-194.

Affiliated with

Also associated with

Rating

Surface polishing of silicon carbide electronic device substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Surface polishing of silicon carbide electronic device substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface polishing of silicon carbide electronic device substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-978756