Surface passivation of GaN devices in epitaxial growth chamber

Details Surface passivation of GaN devices in epitaxial growth chamber Surface passivation of GaN devices in epitaxial growth chamber

2006-05-30

2006-05-30

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S172000, C257S194000

Reexamination Certificate

active

07052942

ABSTRACT:
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.

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