Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2007-10-23
2007-10-23
Dickey, Thomas (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
Reexamination Certificate
active
11146628
ABSTRACT:
A semiconductor package according to the present invention includes a metal can which receives in its interior space a MOSFET. The MOSFET so received is oriented such that its drain electrode is facing the bottom of the can and is electrically connected to the same by a layer of conductive epoxy or a solder or the like. The edges of the MOSFET so placed are spaced from the walls of the can. The space between the edges of the MOSFET and the walls of the can is filled with an insulating layer. A surface of the MOSFET is sub-flush below the plane of a substrate by 0.001-0.005 inches to reduce temperature cycling failures.
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MOSFET BGA Design Guide 2004-Fairchild Semiconductor.
Sawle Andrew N
Standing Martin
Dickey Thomas
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
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