Surface mounted package with die bottom spaced from support...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond

Reexamination Certificate

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C257S762000, C257S784000, C257S786000

Reexamination Certificate

active

06930397

ABSTRACT:
A semiconductor package according to the present invention includes a metal can which receives in its interior space a MOSFET. The MOSFET so received is oriented such that its drain electrode is facing the bottom of the can and is electrically connected to the same by a layer of conductive epoxy or a solder or the like. The edges of the MOSFET so placed are spaced from the walls of the can. The space between the edges of the MOSFET and the walls of the can is filled with an insulating layer. A surface of the MOSFET is sub-flush below the plane of a substrate by 0.001-0.005 inches to reduce temperature cycling failures.

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Mosfet BGA Design Guide 2004-Fairchild Semiconductor, pp. i-ii and pp. 1-43.

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