Surface mount die by handle replacement

Details Surface mount die by handle replacement Surface mount die by handle replacement

1996-10-07

1998-09-15

Niebling, John

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438459, 438667, 438928, 438977, H01L 2176

Patent

active

058077839

ABSTRACT:
A bonded wafer has a first handle wafer 12, a device layer 10', an interconnect layer 14, and a number of vias filled with conductive material that extends between the surfaces 6, 8 of the device layer 10'. the interconnect layer 14 has conductors that connect internal device contacts to the conductive vias. A second handle wafer 40 of glass is bonded to the interconnect layer 14 and the first handle wafer is removed. Bottom, external contacts 36 are formed on surface 6 of device layer 10'.

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