Surface modification method

Details Surface modification method Surface modification method

2005-07-12

2005-07-12

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

Reexamination Certificate

active

06916678

ABSTRACT:
A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

REFERENCES:
patent: 5681394 (1997-10-01), Suzuki
patent: 6110842 (2000-08-01), Okuno et al.
patent: 6482476 (2002-11-01), Liu
patent: 6-140392 (1994-05-01), None
patent: 10-173187 (1998-06-01), None
M. Arai et al., “The origin of the increase of hole trapping due to nitridation of silicon oxide”, 62nd Japan Society of Applied Physics, Annual Meeting, Preprint, No. 2, p. 630, 12a-C-9.
K. Sasada et al., “Low Temperature Formation of Ultra Thin Gate Oxynitride Films Utilizing Activated Oxygen/Nitrogen,” 62nd Japan Society of Applied Physics, Annual Meeting, Preprint, No. 2, p. 631, 12a-C-10.

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