Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-06-25
1997-11-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257103, 372 49, H01L 3300
Patent
active
RE0356654
ABSTRACT:
A surface emitting AlGaInP LED having an ITO layer as a window layer to eliminate the current crowding effect, and an ohmic contact layer between its double hereto-structure of AlGaInP and the ITO layer, so that ITO can be utilized with the double hereto-structure of AlGaInP.
REFERENCES:
patent: 4570172 (1986-02-01), Henry et al.
patent: 5233204 (1993-08-01), Fletcher et al.
patent: 5300791 (1994-04-01), Chen et al.
patent: 5568499 (1996-10-01), Lear
Andre et al., "III-V Alloys and Their Potential for Visible Emitter Applications", Prog. Crystal Growth and Charact., vol. 19, 1989, Pergamon Press, Great Britain, pp. 97-105.
Chang Chuan-Ming
Jou Ming-Jiunn
Lee Biing-Jye
Lin Jyh-Feng
Bednarek Michael D.
Industrial Technology Research Institute
Mintel William
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