Surface image transfer etching

Details Surface image transfer etching Surface image transfer etching

1995-11-06

1997-08-19

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419232, 20419236, 438714, 438732, 216 70, C23C 1434

Patent

active

056584407

ABSTRACT:
A process called surface image transfer etching (SITE) is used to etch patterned photoresist so as to more completely transfer a well-defined pattern formed in the top surface (10a) of a material to the bulk of the material (12). The process uses no mask, but employs only a sputter etching process where the etching rates of surfaces not normal to the ion trajectories are greatly enhanced over the etching rates of surfaces normal to the ion trajectories.

REFERENCES:
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4996077 (1991-02-01), Moslehi et al.
Lejeune, Reactive Ion Beametching of Silicon With a New Plasma Ion Source, Operated with CF4:SiO.sub.2 Over Si Selectivity and Si Surface Modification, Rev. Phys. Appl. (Mar. 1989), v.24(3), pp. 295-308.
J. Pelletier et al, "Etching mechanisms of polymers in oxygen microwave multipolar plasmas", in Applied Physics Letters, vol. 53(20), pp. 1914-1916 (14 Nov. 1988).
J. Pelletier et al, "Microwave plasma etching of Si and SiO.sub.2 in halogen mixture:Interpretation of etching mechanisms", in Journal of Vacuum Scince and Technology B, vol. 7, No. 1, pp. 59-67 (Jan/Feb 1989).

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