Coherent light generators – Particular active media – Semiconductor
Patent
1988-09-27
1990-01-16
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 50, 372 96, H01S 319
Patent
active
048948357
ABSTRACT:
A surface emitting laser diode having a two-dimensionally extended light emitting region is disclosed in which the light emitting region includes a plurality of stripe regions and gap regions each formed between adjacent stripe regions, the stripe regions are optically coupled with each other through the gap regions, and an even-order diffraction grating is formed in at least a part of the light emitting area. The laser diode having the above structure can emit a high-intensity, well-collimated laser beam.
REFERENCES:
Scifres et al., "Highly Collimated laser beams for electrically pumped SH GaAs/GaAlAs distributed feedback laser," Appl. Phys. Letts, vol. 26, No. 2, Jan. 15, 1975, pp. 48-50.
"Surface Emitting GaAs/GaAlAs DFB-TJB Laser", by K. Mitsunaga, et al., The Institute of Electronics and Communication Engineers of Japan, Technical Digest, OQE 86-152, pp. 47-53.
Kojima, et al., "Continuous Wave Operation of a Surface-Emitting AlGaAs/GaAs Multiquantum Well Distributed Bragg Reflector Laser", Applied Physics Letters, vol. 50, No. 24, Jun. 15, 1987, pp. 1705-1707.
Macomber, et al., "Surface-Emitting Distributed Feedback Semiconductor Laser", Applied Physics Letters, vol. 51, No. 7, Aug. 17, 1987, pp. 472-474.
Carlson, et al., "Phase-Locked Operation of a Grating-Surface-Emitting Diode Laser Array", Applied Physics Letters, vol. 50, No. 19, May 11, 1987, pp. 1301-1303.
Chinone Naoki
Okai Makoto
Sakano Shinji
Tsuji Shinji
Uomi Kazuhisa
Epps Georgia Y.
Hitachi , Ltd.
Sikes William L.
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