Surface emitting type optical semiconductor device

Details Surface emitting type optical semiconductor device Surface emitting type optical semiconductor device

2008-08-13

2010-11-09

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046010, C372S046013, C372S050110, C372S050124, C372S081000, C372S099000

Reexamination Certificate

active

07830937

ABSTRACT:
It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.

REFERENCES:
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K. H. Hahn , et al., Modal and Intensity Noise of Large-Area Multiple-Transverse-Mode VCSELs in Multimode-Optical-Fiber Links, OFC 94 Technical Digest, pp. 183-184.
Japanese Office Action for 2005-102036 mailed on Oct. 2, 2009.

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