Surface emitting type optical semiconductor device

Details Surface emitting type optical semiconductor device Surface emitting type optical semiconductor device

2008-09-16

2008-09-16

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046013, C372S046015, C372S050124

Reexamination Certificate

active

11387315

ABSTRACT:
It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.

REFERENCES:
patent: 2004/0213311 (2004-10-01), Johnson et al.
patent: 10-056233 (1998-02-01), None
patent: 2000-022271 (2000-01-01), None
K. H. Hahn, et al., Modal and Intensity Noise of Large-Area Multiple-Transverse-Mode VCSELs in Multimode-Opitcal-Fiber Links, OFC 94 Technical Digest, pp. 183-184.

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