Surface emitting semiconductor laser diode and fabricating metho

Details Surface emitting semiconductor laser diode and fabricating metho Surface emitting semiconductor laser diode and fabricating metho

1995-11-08

1998-10-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 96, H01S 319

Patent

active

058223517

ABSTRACT:
A surface emitting semiconductor laser diode includes a ace emitting laser oscillating portion having a multi-quantum well area and being disposed between a pair of upper and lower reflector stacks for stable light-emitting, a photodiode portion for monitoring a laser beam emitted form the surface emitting laser oscillating portion and electrodes for a laser diode, a photodiode and ground for driving the surface emitting laser oscillating portion and photodiode portion. At least a part of the electrode for the photodiode is directly contacted on the surface of a semiconductor layer of the uppermost part of a deposited structure including the surface emitting laser oscillating portion. Thereby, a fabricating process of the device can be simplified, and the efficiency in monitoring can be maximized, since the photodiode is constituted being adjacent to window area through which a laser beam is directly emitted outward.

REFERENCES:
patent: 5491712 (1996-02-01), Lin et al.

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