Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1995-11-30
1998-10-13
Zarabian, A.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257449, 372 50, H01L 3300
Patent
active
058215662
ABSTRACT:
A surface emitting semiconductor laser device is disclosed which comprises a substrate, a pair of reflector stacks for light-reflecting disposed above the substrate, surface emitting laser means having a quantum well area disposed between the pair of reflector stacks, a photodiode for monitoring/modulating a laser beam, and contacting means for ohmically contacting the surface emitting laser means and photodiode, wherein the pair of reflector stacks and the quantum well area between the stacks are deposited on the center of the substrate to form a mesa-type ridge structure, and a predetermined metal layer for constituting the photodiode is formed on both portions of the substrate beside a lower side of the mesa-type ridge structure. A fabricating process thereof can be simplified by forming the metal layer on the upper side of the device only with one-time metal depositing process. Also, there is a benefit of lowering the laser oscillating critical current by reducing the current diffusion in the substrate by forming a depletion area on the substrate.
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patent: 5424559 (1995-06-01), Kasahara
patent: 5475701 (1995-12-01), Hibbs-Brenner
patent: 5577064 (1996-11-01), Swirhun et al.
patent: 5606572 (1997-02-01), Swirhun et al.
Samsung Electronics Co,. Ltd.
Zarabian A.
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