Surface-emission type semiconductor laser

Details Surface-emission type semiconductor laser Surface-emission type semiconductor laser

2011-07-05

2011-07-05

Park, Kinam (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050110, C372S045010

Reexamination Certificate

active

07974328

ABSTRACT:
The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2):in-line-formulae description="In-line Formulae" end="lead"?nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),  (1)in-line-formulae description="In-line Formulae" end="tail"?where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, andin-line-formulae description="In-line Formulae" end="lead"?nH2−nL2>0.4.  (2)in-line-formulae description="In-line Formulae" end="tail"?

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