Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-20
1996-10-15
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257340, 257344, 257346, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055657001
ABSTRACT:
A new surface counter-doped lightly doped source and drain integrated circuit field effect transistor device is described. A gate silicon oxide layer is formed on the silicon substrate. A layer of polysilicon is deposited over the gate silicon oxide layer and etched to form a gate electrode structure. A first ion implantation is performed at a tilt angle to form lightly doped drain regions in the semiconductor substrate wherein the lightly doped drain regions are partially overlapped by the gate electrode structure. A second ion implantation is performed at a larger tilt angle and lower energy than the first ion implantation wherein the second ion implantation counter-dopes the surface of the lightly doped drain regions to form a very lightly doped drain layer thus making the lightly doped drain regions buried regions. A thin layer of silicon oxide is deposited over the surface of the polysilicon gate electrode structure and is anisotropically etched to form ultra thin spacers on the sidewalls of the polysilicon gate electrode structure. A third ion implantation is performed with no tilt angle to complete formation of the lightly doped drain regions. A glasseous layer is deposited over all surfaces of the substrate and flowed followed by metallization and passivation to complete manufacture of the integrated circuit.
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patent: 5073514 (1991-12-01), Ito et al.
patent: 5147811 (1992-09-01), Sakagami
patent: 5158901 (1992-10-01), Kosa et al.
patent: 5362982 (1994-11-01), Hirase et al.
Chang Chun Y.
Chou Jih W.
Ko Joe
Loke Steven H.
United Microelectronics Corporation
Wright William H.
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