Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-09-13
2005-09-13
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
C250S306000, C250S310000
Reexamination Certificate
active
06943043
ABSTRACT:
A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
REFERENCES:
patent: 3614608 (1971-10-01), Gledd
patent: 4541715 (1985-09-01), Akiyama et al.
patent: 4949162 (1990-08-01), Tamaki et al.
patent: 4980639 (1990-12-01), Yoshizawa et al.
patent: 4988877 (1991-01-01), Stokowksi et al.
patent: 5001536 (1991-03-01), Fukuzawa et al.
patent: 5089774 (1992-02-01), Nakano
patent: 5132507 (1992-07-01), Nakano
patent: 5233191 (1993-08-01), Noguchi et al.
patent: 5280176 (1994-01-01), Jach et al.
patent: 5327012 (1994-07-01), Yano et al.
patent: 5365034 (1994-11-01), Kawamura et al.
patent: 5412210 (1995-05-01), Todokoro et al.
patent: 5453994 (1995-09-01), Kawamoto et al.
patent: 5493236 (1996-02-01), Ishii et al.
patent: 5614833 (1997-03-01), Golladay
patent: 5637186 (1997-06-01), Liu et al.
patent: 5757198 (1998-05-01), Shida et al.
patent: 5780870 (1998-07-01), Maeda et al.
patent: 5781017 (1998-07-01), Cole et al.
patent: 5801540 (1998-09-01), Sakaguchi
patent: 5815002 (1998-09-01), Nikawa
patent: 5851842 (1998-12-01), Katsumata et al.
patent: 5900645 (1999-05-01), Yamada
patent: 5989919 (1999-11-01), Aoki
patent: 6037588 (2000-03-01), Liu et al.
patent: 6127193 (2000-10-01), Bang et al.
patent: 6294919 (2001-09-01), Baumgart
patent: 6317514 (2001-11-01), Reinhorn et al.
patent: 6417680 (2002-07-01), Birdsley et al.
patent: 6603122 (2003-08-01), Taleyarkhan
patent: 6855929 (2005-02-01), Kimba et al.
patent: 2002/0148975 (2002-10-01), Kimba et al.
patent: 50-63990 (1975-05-01), None
patent: 57-6310 (1982-01-01), None
patent: 62-19707 (1987-01-01), None
patent: 63-9807 (1988-01-01), None
patent: 03-205573 (1991-09-01), None
patent: 04-062857 (1992-02-01), None
patent: 06-273297 (1994-09-01), None
patent: 07-066172 (1995-03-01), None
patent: 07-221148 (1995-08-01), None
patent: 08-005528 (1996-01-01), None
patent: 08-313244 (1996-11-01), None
patent: 09-061142 (1997-03-01), None
patent: 09-243535 (1997-09-01), None
patent: 10-281746 (1998-10-01), None
patent: 10-300450 (1998-11-01), None
patent: 11-026343 (1999-01-01), None
patent: 2000-124276 (2000-04-01), None
patent: 2000-164715 (2000-06-01), None
patent: 2000-174077 (2000-06-01), None
patent: 2000-180143 (2000-06-01), None
“An In-Line Contact and Via Hole Inspection Method Using Electron Beam Compensation Current”, Yamada et al., IEEE 1999, Doc. No. 0-7803-5413-3/99/, available from http://www.fabsol.com/us/images/library/21.pdf.
Itagaki Yohsuke
Tsujide Tohru
Ushiki Takeo
Yamada Keizo
Fab Solutions, Inc.
Hoang Quoc
Nelms David
Steinberg Neil A.
LandOfFree
Surface contamination analyzer for semiconductor wafers,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface contamination analyzer for semiconductor wafers,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface contamination analyzer for semiconductor wafers,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3440300