Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-28
1997-07-08
Levy, Stuart S.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 257409, 257339, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
056464312
ABSTRACT:
A metal oxide semiconductor field effect transistor with a lightly doped silicon substrate includes an oppositely doped well and oppositely doped source region and oppositely doped drain region with respect to the lightly doped substrate, the improvement comprising at least one counter doped region formed along the surface of the oppositely doped well between the source and drain regions. The substrate comprises a P-substrate, the well comprises an N- well and the counter doped region is doped P; the counterdoped region comprises an island among a plurality of islands between the source region and the drain region. The counterdoped region comprises an island among a plurality of islands between the source region and the drain region.
REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4717679 (1988-01-01), Baliga et al.
patent: 4777521 (1988-10-01), Coe
patent: 4990982 (1991-02-01), Omoto et al.
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5023678 (1991-06-01), Kinzer
patent: 5089871 (1992-02-01), Fujihara
patent: 5258636 (1993-11-01), Rumennik et al.
patent: 5294824 (1994-03-01), Okada
patent: 5311051 (1994-05-01), Tukizi
patent: 5378912 (1995-01-01), Pein
Hsu Ching-Hsiang
Kuo Da-Chi
Giordana Adriana
Levy Stuart S.
United Microelectronics Corporation
Wright William H.
LandOfFree
Surface breakdown reduction by counter-doped island in power mos does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface breakdown reduction by counter-doped island in power mos, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface breakdown reduction by counter-doped island in power mos will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2410149