Surface acoustic wave filter employing A1N/A1N:H/A1N tri-layered

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419215, 427100, C23C 1432, B05D 512

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active

060997001

ABSTRACT:
The present invention provides a novel surface acoustic wave (SAW) filter having a high propagation velocity and electromechanical coupling coefficient (k.sup.2) employing A1N/A1N:H/A1N tri-layered film where both sides of A1N:H film are deposited with A1N film to protect the film from vapor, and a process for fabricating the same.

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H. Okano et al., "Characteristics of AIN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Bank Surface Acoustic Wave Devices", Jpn. J. Appl. Phys., 33:2957-2961, No Month Available (1994).
H. Nakahata et al., "Theoretical Study on SAW Characteristics of Layered Structures Including a Diamond Layer", IEEE Trans. Ultrason. Ferroelect. Frequen. Control, 42:362-375, No Month Available (1995).
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K. Tsubouchi and N. Mikoshiba, "Zero-Temperature-Coefficient SAW Devices on AIN Epitaxial Films", IEEE Trans. Sonics Ultrason., SU-32:634-644, No Month Available (1985).

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