Surface acoustic wave device incorporating single crystal LiNbO.

Details Surface acoustic wave device incorporating single crystal LiNbO. Surface acoustic wave device incorporating single crystal LiNbO.

1997-10-16

2000-02-15

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257415, 310313A, H01L 2982

Patent

active

060256362

ABSTRACT:
A surface acoustic wave device includes at least diamond, a single crystal LiNbO.sub.3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO.sub.3 layer and uses a surface acoustic wave (wavelength: .lambda..sub.n .mu.m) in an nth-order mode (n=1 or 2). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) and the cut orientation (.theta., .PHI., and .psi. represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO.sub.3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K.sup.2) is realized.

REFERENCES:
patent: 5565725 (1996-10-01), Nakahata et al.
patent: 5838090 (1998-11-01), Nakahata et al.
The Transactions of The INstitute of Electronics and Communication Engineers, '86/10 vol. J69-C No. 10, 1986.

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