Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1996-11-06
1998-06-02
Niebling, John
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
H01L 21265
Patent
active
057599041
ABSTRACT:
The present invention provides a method for suppressing transient enhanced diffusion of ion implanted dopants in a semiconductor substrate comprising bombarding the substrate in a vacuum with a beam of bubble-forming ions at a first temperature, a first energy, and a first ion dose sufficient to form a dispersion of bubbles at a depth equivalent to a peak of damage distribution in the substrate from implantation of dopant ions into the substrate in a vacuum at a second temperature, a second energy, and a second ion dose, said dispersion being sufficient to reduce said damage distribution.
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T.H. Huang et al "Influence of Fluorine Preamorahization on Diffusion and Activation of Low Energy Implated Boron During Rapid Thermal Annealing", Appl. Phys. Lett. 65(14) 3 Oct. 1994.
Mulpuri S.
Niebling John
Southwest Research Institute
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