Suppression of NiSi 2 formation in a nickel salicide...

Details Suppression of NiSi 2 formation in a nickel salicide... Suppression of NiSi 2 formation in a nickel salicide...

2006-02-14

2006-02-14

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

C427S255180, C427S255270

Reexamination Certificate

active

06998153

ABSTRACT:
A method that includes placing a wafer within a process chamber, generating a nitrogen plasma that is remote from the process chamber, nitriding a surface of the wafer with the nitrogen plasma, depositing a nickel film over the nitrided silicon substrate surface, and annealing the nickel film to form NiSi.

REFERENCES:
patent: 2002/0064918 (2002-05-01), Lee et al.
patent: 2003/0157771 (2003-08-01), Luoh et al.

Affiliated with

Also associated with

Rating

Suppression of NiSi 2 formation in a nickel salicide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Suppression of NiSi 2 formation in a nickel salicide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Suppression of NiSi 2 formation in a nickel salicide... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3667335