Suppression of n-type autodoping in low-temperature Si and...

Details Suppression of n-type autodoping in low-temperature Si and... Suppression of n-type autodoping in low-temperature Si and...

2005-01-04

2005-01-04

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S907000, C438S909000, C438S916000

Reexamination Certificate

active

06838359

ABSTRACT:
A method of manufacturing a semiconductor device, which method comprises the step of epitaxially growing a stack comprising an n-type doped layer of a semiconductor material followed by at least one further layer of a semiconductor material, the stack being grown in one continuous cycle.

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