Suppression of dark current in a photosensor for imaging

Details Suppression of dark current in a photosensor for imaging Suppression of dark current in a photosensor for imaging

2007-08-31

2009-08-18

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S093000

Reexamination Certificate

active

07576376

ABSTRACT:
A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.

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