Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2002-08-30
2004-05-25
Clark, Sheila V. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000
Reexamination Certificate
active
06740949
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an improvement in a structure of a solid state image sensing device used in an image forming apparatus such as a copy machine, printer, facsimile machine and so on or an image input apparatus utilized in an image scanner.
2. Description of the Prior Art
In an image scanner or an image forming apparatus such as copy machine, printer, facsimile machine and the like, an image input apparatus (image sensing apparatus) to input an optical image of an object as a target to be image picked up is equipped, and in the image input apparatus a solid state image sensing device (charge coupled device, hereinafter referred to as CCD) is used.
FIGS.
13
(A) and
13
(B) are of a schematic illustration and its perspective view to show a layout of image focusing optical system which constitutes an image input apparatus, and the image focusing optical system includes a solid state image sensing device
1
and a lens L, and it is arranged to face against an object D to be image picked up (manuscript copy).
In
FIG. 13
, the solid state image sensing device
1
is an electronic component having a structure to be equipped on a circuit board
18
, in that an incoming light receiving surface is arranged to be located at a position at which optical image of the object to be image picked up D is focused by the lens L.
At the same time, in FIG.
13
(B), the solid state image sensing device
1
is mounted on a surface of the circuit board
18
in the image input apparatus. Herein, the circuit board
18
has a function to drive the solid state image sensing device
1
, to give an electrical process on output signal from the solid state image sensing device
1
which is generated in connection with a receiving of the optical image and then to output the processed signal to a control portion of the image input apparatus body (not shown).
At this time, especially when the object D to be image picked up in this case is a photographic image for the image input apparatus, on a semiconductor chip
3
which constitutes the solid state image sensing device
1
used a plurality of micro photoelectric conversion elements
3
a
are arranged in a single line. By this arrangement the image is input as a line image by the photoelectric conversion elements
3
a
. Especially, in the color photographic image input apparatus to input a color photographic image, a color semiconductor chip
3
is used in that three lines
3
a
,
3
b
and
3
c
of pixels respectively having a peak of the spectral sensitivity in Red area (hereinafter referred to as simply R), Green area (hereinafter referred to as simply G) and Blue area (hereinafter referred to as simply B) as shown in FIG.
13
(C) are disposed.
Further, the image sensing device
1
is classified in a several kind by their external structure (package structure). Among all of them recently a solid state image sensing device of Ceramic Dual Inline Package (hereinafter refereed to as “Cer DIP”) type and a solid state image sensing device with resin made package are increased because of its advantage in manufacturing cost (cheap) and they become popular to be used in the image input apparatus.
FIGS.
14
(A), (B) and (C) are a plan view, a back view and a cross sectional view taken along the A—A line to show a basic structure of a normal (conventional) laminated type solid state image sensing device
1
A (for color).
The laminated type solid state image sensing device
1
A has a structure in which a semiconductor chip
3
is accommodated in a package
2
and photoelectric conversion elements are mounted on the semiconductor chip
3
. The package
2
includes a package body
5
which is made of ceramic thin plates having a predetermined shape being laminated in a box form; a semiconductor chip
3
on which the photoelectric conversion element is mounted, is received in a concave portion
6
of the package body
5
; lines of photoelectric conversion element
3
a
,
3
b
and
3
c
which are disposed on the incoming light receiving surface of the semiconductor chip
3
; and a transparent cover glass
15
to seal an opening of the concave portion
6
of package body
5
.
The package body
5
mounts the semiconductor chip
3
in an inner bottom (on an upper surface of the bottom plate) of the concave portion
6
and has a lead frame
7
which is brought out with passing through side walls of the package body
5
, and inner end portion of the lead frame
7
is electrically connected to electrodes of the semiconductor chip
3
by lead wires
8
.
Next FIGS.
15
(A), (B) and (C) show a basic structure of a normal (conventional) Cer DIP type solid state image sensing device
1
B (herein for color). The Cer DIP type solid state image sensing device
1
B has a structure in which a semiconductor chip
3
is received in a package
2
and the photoelectric conversion elements are mounted on the semiconductor chip
3
. The package
2
includes a package body
5
; a semiconductor chip
3
on which the photoelectric conversion elements are mounted, is received in a concave portion
6
of the package body
5
; lines of photoelectric conversion elements
3
a
,
3
b
and
3
c
which are disposed on the incoming light receiving surface of the semiconductor chip
3
; and a transparent cover glass
15
to seal an opening of the concave portion
6
of the package body
5
.
The package body
5
has a structure in which an annular window frame
10
b
made of ceramic is bonded to be integrated as a unit on one surface of a plate formed base frame (bottom plate)
10
a
made of ceramic through a sealing glass
10
c
, and at the same time a lead frame
7
is included in a state that the lead frame is brought out with passing through the sealing glass
10
c
and the lead frame
7
is electrically connected to electrodes of the semiconductor chip
3
mounted on an inner bottom of the concave portion by lead wires
8
.
FIG. 16
shows a cross sectional shape of a basic structure of a solid state image sensing device
1
C (in this case for color) of a resin packaging type. A package
2
of this solid state image sensing device
1
C has a structure in that a semiconductor chip
3
is mounted via a metal plate
12
on an inner bottom surface of a concave portion
11
a
in a resin packaging body
11
, photoelectric conversion elements are mounted on the semiconductor chip
3
and the electrode on the semiconductor chip are connected through lead wires (bonding wires)
8
to a lead frame
7
which is disposed in such a manner to pass through side walls of the packaging body
11
.
Usually a thermosetting resin is used for the resin packaging body
11
. An opening in the concave portion
11
a
is scaled by a cover glass
15
.
Herein the image sensing device
1
is usually mounted on the circuit board
18
by means that the lead frames
7
is soldered on a wiring pattern of the circuit board
18
as shown in FIG.
13
(A), and the circuit board
18
is mounted on a housing body and so on which is attached on the image input apparatus (image sensing apparatus).
However, it is difficult to mount the solid state image sensing device
1
with high precision on a predetermined position of the circuit board
18
because it has a soldered structure on the circuit board. Though the circuit board
18
can be mounted accurately on the image input apparatus, incorrectness of positions between the solid state image sensing device
1
and the circuit board
18
sometimes brings an error of positional alignment between the solid state image sensing device
1
and the component parts such as the lens L and the like as a result.
The error of positional alignment of this kind brings a severe error in positional alignment between the solid state image sensing device
1
and an image of the manuscript copy D as an object to be image picked up, and accordingly causes an image sensing quality deterioration.
Next FIGS.
17
(A) and (B) show a structure of holding means (chucking means) to be used for holding the solid state image sensing device when the solid st
Andoh Jun
Tsuyuki Tatsuya
Clark Sheila V.
Ricoh & Company, Ltd.
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