Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-06-21
2005-06-21
Brock, II, Paul E. (Department: 2829)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S455000, C438S409000, C438S456000, C438S457000, C438S479000, C438S435000, C438S753000, C438S954000, C438S690000, C438S459000
Reexamination Certificate
active
06908828
ABSTRACT:
Processes that may be used in producing electronic, optoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a semiconductor material having a thickness of plural thin layers onto a support layer of. The semiconductor material for the support layer may be selected to be less precious or to have a lower quality than the donor layer. The support layer may have sufficient mechanical characteristics for supporting the donor layer during desired semiconductor processing treatments.
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Letertre Fabrice
Maurice Thibaut
Brock, II Paul E.
S.O.I. TEC Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
Yevsikov Victor V.
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