Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-15
2005-03-15
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S355000, C257S371000, C257S544000
Reexamination Certificate
active
06867464
ABSTRACT:
An integrated circuit device is described which includes a voltage reduction circuit to reduce an externally supplied voltage using a transistor threshold drop. The transistor is fabricated in a well to isolate the transistor from the integrated circuit substrate. The transistor can be fabricated with a lower breakdown voltage level and still reduce a high voltage. The transistor can also be fabricated in the same manner as other transistors in the integrated circuit. A voltage regulator circuit is also described which incorporates the reduction circuit to allow the use of transistors which are not designed to handle an external voltage Vpp.
REFERENCES:
patent: 5581206 (1996-12-01), Chevallier et al.
patent: 5646516 (1997-07-01), Tobita
patent: 5698972 (1997-12-01), Keeth
patent: 6103573 (2000-08-01), Harari et al.
patent: 6462580 (2002-10-01), Nishio et al.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
Wojciechowicz Edward
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