Supersonic molecular beam etching of surfaces

Details Supersonic molecular beam etching of surfaces Supersonic molecular beam etching of surfaces

1993-08-31

1995-06-13

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 427565, 427600, H01J 2100

Patent

active

054239400

ABSTRACT:
In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.

REFERENCES:
patent: 4734158 (1988-03-01), Gillis
patent: 4740267 (1988-04-01), Knauer et al.
patent: 4788082 (1988-11-01), Schmitt
patent: 4917123 (1990-04-01), McConnell et al.
patent: 4935623 (1990-06-01), Knauer
patent: 4937094 (1990-06-01), Doehler et al.
patent: 4942057 (1990-07-01), Steinwandel et al.
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5104634 (1992-04-01), Calcote
patent: 5108535 (1992-04-01), Ono et al.
patent: 5108778 (1992-04-01), Suzuki et al.
patent: 5271800 (1993-12-01), Koontz et al.
patent: 5286331 (1994-02-01), Chen et al.
General Chemistry-Netergall et al; (c) 1976; Heath & Co., p. 160.
Ming L. Yu & Benjamin N. Eldridge, Real-Time Study of Oxygen on Si(100), Physical Review Letters, Apr. 20, 1987, pp. 1691-1694.
Nishino et al., Damage Free Selective Etching of Si Native Oxide Employing Fluorine Atoms & Nitrogen Hydrides Produced by NH3 & NF3 Microwave Discharge, 1989 Dry Process Symposium, pp. 90-93.

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