Superlattice strain relief layer for semiconductor devices

Details Superlattice strain relief layer for semiconductor devices Superlattice strain relief layer for semiconductor devices

2006-02-17

2009-06-16

Chen, Jack (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257SE33032

Reexamination Certificate

active

07547925

ABSTRACT:
A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.

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