Superlattice optical semiconductor device where each barrier...

Details Superlattice optical semiconductor device where each barrier... Superlattice optical semiconductor device where each barrier...

2005-12-16

2008-12-02

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S018000, C257S021000, C257S022000, C257SE33023

Reexamination Certificate

active

07459719

ABSTRACT:
An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is constant, each well layer is uniformly provided with compression strain and each barrier layer is provided with large extension strain in a center portion thereof along the thickness direction and small extension strain in portions thereof in the vicinity of the well layers.

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DuPont Kapton CR Polyimide Film fact sheet, 6 pages.
S.D. Roh et al, Wiley Encyclopedia of Electrical and Electronics Engineering, Distributed Bragg Reflector Lasers article, 1999, 15 pages.
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Choquette, et al., “GaAs Vertical-Cavity Surface Emitting lasers Fabricated by Reactive Ion Etching”, IEEE Photonics Technology Letters, vol. 3, No. 10, Oct. 1991.

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