Superlattice avalanche photodiode with mesa structure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257458, H01L 31107, H01L 31075, H01L 31105, H01L 31117

Patent

active

056545789

ABSTRACT:
A superlattice avalanche photodiode with a mesa structure is provided, which enables to keep its noise characteristic low for a long time without decreasing the dynamic range for high-speed response. The photodiode has a semiconductor superlattice carrier multiplication layer, a first semiconductor electric-field buffer layers of a first conductivity type formed on one side of the carrier multiplication layer, and a second semiconductor electric-field buffer layer of a second conductivity type formed on the other side of the carrier multiplication layer. The photodiode further has a semiconductor light-absorbing layer of the second conductivity type formed on the second electric-field buffer layer. At least the light-absorbing layer constitutes the mesa structure. The first electric-field buffer layer is made of a central part and a peripheral part surrounding the central part. The peripheral part has a greater electric-field relaxation effect than that of the central part. The interface damage of the light-absorbing layer is restrained through the difference of the electric-field relaxation effect.

REFERENCES:
patent: 5075750 (1991-12-01), Kagawa
patent: 5338947 (1994-08-01), Watanabe
patent: 5552629 (1996-09-01), Watanabe
F. Capasso, W.T. Tsang, A. L. Hutchinson, and G. F. Williams, Enhancement of electron impactionization in a superlaticce: A New avalance photoiode with a large ionization rate ratio, Bell Laboratories, Murray Hill, New Jersey, Sep. 29, 1981, pp. 38-40.
Toshiaki Kagawa, Yuichi Kawamura and Hidetoshi Iwamura, InGaAsP-InAlAs Superlattice Avalance Photodiode, IEEE Journal of Quantum Electronics, vol. 28, No. 6, Jun. 1992, pp. 1419-1423.
H. Nakamura, S. Hanatani, S. Tanaka, T. Notsu, H. Nakano and K. Ishida, An InGaAs/InAlAs Superlattice Avalanche Photodiode with Thin Well Width for 10Gb/s Optical Transmission Systems, Central Research Laboratory, Hitachi Ltd., Tokyo, pp. 261-264.
Multiplication-Dependent Frequency Response of inP/InGaAs Avalanche Photodiode, Electronics Letters, vol. 20, No. 9, Apr. 26, 1984, pp. 373-374.

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