Superlattice avalanche photodiode (APD)

Details Superlattice avalanche photodiode (APD) Superlattice avalanche photodiode (APD)

1995-02-21

1996-08-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257186, H01L 2915, H01L 31107

Patent

active

055436293

ABSTRACT:
A superlattice APD includes light absorption layer for generating carriers by absorbing light, a multiplication layer for multiplying the carriers, and a pair of electrodes for driving the carriers. The multiplication layer includes a superlattice structure with a well layer less than 10 nm in thickness and a barrier layer more than 10 nm and less than 20 nm in thickness deposited in alternate layers.

REFERENCES:
patent: 4596070 (1986-06-01), Bayraktaroglu
patent: 4645688 (1987-02-01), Makino et al.
patent: 4894526 (1990-01-01), Bethea et al.
patent: 4982255 (1991-01-01), Tomito
Capasso et al Appl. Phys Lett. 48 (19) 12 May 1986 pp. 1294-1296 "New Avalanche . . . Discontinuity".
Capasso et al. Appl Phys. Lett. 45 (11) 1 Dec. 1984 pp. 1193-1195 "Pseudo-Quaternary . . . Photodiode".
IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct., 1986, pp. 1402-1510 "Theoretical Study of Multiquantum Well Avalanche Photodiodes made from the GaInAs/A1InAs Material System" by Kevin Brennan.

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