Superjunction semiconductor device

Details Superjunction semiconductor device Superjunction semiconductor device

2005-06-29

2011-12-27

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29256, C257S127000, C257S484000, C257S605000, C257S606000, C257S620000

Reexamination Certificate

active

08084815

ABSTRACT:
A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with rounded corners surrounding the active region. The active region includes an active n region and active p pillars having vertical stripe shapes disposed at regular intervals in the active n region. The top and bottom ends of the active p pillars are separated from the edge p pillar. The termination region includes termination n pillars and termination p pillars alternately arranged around the edge p pillar. Surplus p charges that are not used to balance the quantity of p charges and the quantity of n charges among p charges included in the upper and lower parts of the edge p pillar are eliminated or n charges are supplemented to balance the quantity of p charges and the quantity of n charges.

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patent: 2002-280555 (2002-09-01), None
patent: 10-2005-0095385 (2005-09-01), None

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