Superjunction power semiconductor device

Details Superjunction power semiconductor device Superjunction power semiconductor device

2007-01-24

2009-02-17

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S341000, C257S401000, C257SE29256, C257SE29257

Reexamination Certificate

active

07492003

ABSTRACT:
A superjunction power semiconductor device which includes spaced drift regions each extending from the bottom of a respective gate trench to the substrate of the device.

REFERENCES:
patent: 5365085 (1994-11-01), Tokura et al.
patent: 2003/0219933 (2003-11-01), Yamauchi et al.
patent: 2004/0150039 (2004-08-01), Henson
patent: 2005/0133859 (2005-06-01), Kuwahara et al.
patent: 2005/0221547 (2005-10-01), Yamauchi et al.

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