Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257S653000, C257S655000, C438S247000, C438S390000, C438S268000
Reexamination Certificate
active
10968499
ABSTRACT:
An improved superjunction semiconductor device includes a charged balanced pylon in a body region, where a top of the pylon is large to create slight charge imbalance. A MOSgated structure is formed over the top of the pylon and designed to conduct current through the pylon. By increasing a dimension of the top of the pylon, the resulting device is less susceptible to variations in manufacturing tolerances to obtain a good breakdown voltage and improved device ruggedness.
REFERENCES:
patent: 6040600 (2000-03-01), Uenishi et al.
patent: 6353252 (2002-03-01), Yasuhara et al.
patent: 6410958 (2002-06-01), Usui et al.
patent: 6509240 (2003-01-01), Ren et al.
patent: 6605862 (2003-08-01), Van Dalen et al.
patent: 6674126 (2004-01-01), Iwamoto et al.
patent: 6683347 (2004-01-01), Fujihira
patent: 6700141 (2004-03-01), Iwamoto et al.
patent: 6713813 (2004-03-01), Marchant
patent: 6740931 (2004-05-01), Kouzuki et al.
patent: 6762455 (2004-07-01), Oppermann et al.
patent: 6764906 (2004-07-01), Darwish
patent: 6768170 (2004-07-01), Zhou
patent: 6828609 (2004-12-01), Deboy et al.
patent: 6849900 (2005-02-01), Aida et al.
patent: 6979862 (2005-12-01), Henson
patent: 2001/0052601 (2001-12-01), Onishi et al.
patent: 2002/0063281 (2002-05-01), Tihanyl
patent: 2004/0150040 (2004-08-01), Nitta et al.
patent: 2004/0245570 (2004-12-01), Ninomiya
patent: 2005/0082570 (2005-04-01), Sridevan
patent: 198 40 032 (1999-11-01), None
Pham Long
Rao Shrinivas H.
LandOfFree
Superjunction device with improved ruggedness does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Superjunction device with improved ruggedness, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superjunction device with improved ruggedness will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3821228