Superior fill conditions in a replacement gate approach by...

Details Superior fill conditions in a replacement gate approach by... Superior fill conditions in a replacement gate approach by...

2010-09-29

2011-11-01

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257S410000, C257SE29255, C257SE21190

Reexamination Certificate

active

08048792

ABSTRACT:
In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

REFERENCES:
patent: 5369303 (1994-11-01), Wei
patent: 7745889 (2010-06-01), Lin et al.
patent: 2002/0096773 (2002-07-01), Anezaki et al.
patent: 2008/0185637 (2008-08-01), Nagaoka et al.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2009 047 891.4 dated Nov. 5, 2010.

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