Supercritical carbon dioxide to reduce line edge roughness

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Processing feature prior to imaging

Reexamination Certificate

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C430S322000

Reexamination Certificate

active

07049053

ABSTRACT:
Polymer aggregates in a photoresist layer may be dissolved or reduced in dimension by treatment with supercritical carbon dioxide. The supercritical carbon dioxide may be used before and/or after development of the photoresist. The SCCO2treatment causes swelling of the photoresist and may allow polymer aggregates in the photoresist to be dissolved. Controlled release of the carbon dioxide de-swells the photoresist, resulting in reduced line edge roughness of openings in the photoresist and reduced resistance of metal lines formed in the openings.

REFERENCES:
patent: 6358673 (2002-03-01), Namatsu
patent: 2004/0035021 (2004-02-01), Arena-Foster et al.

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