Superconductor magnetic memory cell and method for accessing the

Details Superconductor magnetic memory cell and method for accessing the Superconductor magnetic memory cell and method for accessing the

1991-04-18

1994-01-04

Hille, Rolf

Static information storage and retrieval

Systems using particular element

Superconductive

365160, 365161, 257 31, 257661, 505702, G11C 1144

Patent

active

052766390

ABSTRACT:
A magnetic memory cell including an information storage unit of a three-layer structure having two magnetic thin films and a non-magnetic thin film interposed between the two thin films, an X-direction conductor and a Y-direction conductor intersecting each other at a position of the information storage unit, and a sense conductor located at a side of the X-direction conductor opposite to the Y-direction conductor. The sense conductor is separated from the X-direction conductor and extending to overlap the X-direction conductor. The two magnetic thin films have an equal saturation magnetic flux amount and an uniaxial magnetic anisotropy in the film plane, but are different from each other in either one of a magnetic anisotropy and a coercive force. The X-direction conductor, the Y-direction conductor and the sense conductor are formed of a superconductor material, and the sense conductor has a Josephson junction (superconduction weak link) positioned above the information storage unit.

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Kump et al., "Coupled NDRO Magnetic Film Memory", IBM Tech. Dis. Bull., vol. 13, No. 7, Dec. 1990.
Archey et al., "Double layer memory device", IBM Tech. Dis. Bull., vol. 12, No. 7, Dec. 1969.

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