Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-03-22
1999-02-09
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 34, H01L 2906
Patent
active
058698469
ABSTRACT:
A superconducting junction device which is easily manufactured, multifunctional, and utilizes the superconducting Josephson effects is described. A first junction (Josephson junction) and a second junction (Josephson junction) are disposed o a substrate across a coupling portion of a dielectric. The first junction comprises a first upper electrode, a first barrier layer and a first lower electrode. The second junction comprises a second upper electrode, a second barrier layer and a second lower electrode. The first lower electrode and the second lower electrode are connected in series via a connecting electrode. A superconducting reflecting wall which is connected via the connecting electrode is provided around the two Josephson junctions including the coupling portion.
REFERENCES:
patent: 5065096 (1991-11-01), Muck et al.
patent: 5339457 (1994-08-01), Kawasaki et al.
J. H. Hinken, Superconductor Electronics --Fundamentals and Microwave Applications, pp. 84-85 and English translation. 1989.
Steven T. Ruggiero et al., Superconducting Devices, pp. 146-165. 1990.
Higashino Hidetaka
Sakai Masahiro
Setsune Kentaro
Jr. Carl Whitehead
Matsushita Electric - Industrial Co., Ltd.
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