Superconducting device having an thin superconducting channel fo

Details Superconducting device having an thin superconducting channel fo Superconducting device having an thin superconducting channel fo

1993-07-26

1995-05-16

Hille, Rolf

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

257 39, 257 33, 257 35, 505234, 505238, 505702, 505729, 427 62, H01B 1200, H01L 3922, B05D 512

Patent

active

054160723

ABSTRACT:
A superconducting device has a superconducting channel formed of an oxide superconductor on the principal surface of a substrate. A source electrode and a drain electrode likewise formed of oxide superconductor, are electrically connected by the channel to provide for superconducting current flow. A superconducting gate electrode is isolated by a side insulating region which completely covers each of opposite side surfaces of the gate electrode. The relative thicknesses of both the source and drain electrodes are much greater than that of the channel thickness. The superconducting channel and the gate insulator are both formed by one oxide thin film, and in a preferred embodiment, the gate electrode likewise is provided by the same film which forms the gate insulator and channel. The gate insulator is therefore is formed of the same constituent elements as those of the superconducting channel, but the film portion which forms the gate insulator has oxygen in an amount less than that of the portion defining the channel. The superconducting gate electrode is surrounded by the superconducting channel, the superconducting source electrode and the superconducting drain electrode but is electrically isolated from the superconducting channel, the superconducting source electrode and the superconducting drain electrode by the gate insulator and the side insulating region.

REFERENCES:
patent: 5096882 (1992-03-01), Kato et al.
patent: 5143894 (1992-09-01), Rothschild et al.
patent: 5219834 (1993-06-01), Usuki et al.
Yoshida et al, "Monolithic Device Fabrication Using High-TC Superconductor", IEDM-88, Dec. 1988, pp. 282-285.
Wu et al, "High Critical Currents in Epitaxial YBaCuO Thin Films on Silicon", Appl. Phys. Lett., vol. 54, #8, 20 Feb. 1989, pp. 754-756.

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