Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1993-12-22
1996-08-27
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 34, 257 36, 257 38, 257 39, H01L 2906
Patent
active
055503896
ABSTRACT:
A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.
REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 4843446 (1989-06-01), Nishino et al.
patent: 4884111 (1989-11-01), Nishino et al.
patent: 4893156 (1990-01-01), Karasawa
patent: 5272358 (1993-12-01), Nishino et al.
Japanese Journal Of Applied Physics (Part 2), vol. 26, No. 3, 1987, pp. 1617-1618, Tokyo, JP; Z. Ivanov et al.: Three Terminal Josephson Junction with a Semiconductor Accumulation Layer.
Datta, S. et al, "Novel Interference Effects Between Parallel Quantum Wells", Physical Review Letters, vol. 55, No. 21, Nov. 18, 1985, pp. 2344-2347.
Andreev, A. F., "The Thermal Conductivity Of The Intermediate State In Superconductors", Soviet Physics JETP, vol. 19, No. 5, Nov. 1964, pp. 1228-1231.
"Normal to Superconducting Current Conversion in Mesoscopic Semiconductor-Superconductor Structure", Nishino et al., Proc. 3rd Int. Symp. Foundations of Quantum Mechanics, Tokyo, 1989, 263-269.
"Carrier reflection at the superconductor-semiconductor boundary observed using a coplanar-point-contact injection", Nishino et al., Phys. Rev. B41, (1990) 7274-7276.
"Superconductivity and field effect transistors", Japanese Journal of Applied Physics, vol. 26, Supp. 26-3, Aug. 1987, pp. 1545-1546.
"Feasibility of hybrid Josephson field effect transistors", Journal of Applied Physics, vol. 51, No. 5, May 1980, pp. 2736-2743.
Patent Abstracts of Japan, vol. 7, No. 17, Jan. 1983, p. 1162 E 154.
"Study of Si-coupled superconducting field-effect transistor by tunnelling spectroscopy", Proceedings International Electron Device Meeting, San Francisco, CA 11th-14th Dec. 1988, pp. 286-289, IEEE.
"Monolithic device fabrication using high-Tc superconductor", Proceedings International Electron Devices Meeting, San Francisco, CA 11th-14th Dec. 1988, pp. 282-285.
Soviet Physics Journal of Experimental and Theoretical Physics, 1964, vol. 19, No. 5; The Thermal Conductivity of the Intermediate State in Superconductors, A. F. Andreev, pp. 1228-1231.
R. E. Drake et al., "Mo.sub.x Si.sub.1-x Base Electrodes for Josephson Junctions," IBM Technical Disclosure Bulletin, vol. 21 (Sep. 1978) p. 1698.
P. Chaudhari et al., "Critical-Current Measurements in Epitaxial Films of YBa.sub.2 Cu.sub.3 O.sub.7-x Compound", Physical Review Letters, vol. 58 No. 25 (23 Jun. 1987) pp. 2684-2686.
Hasegawa Haruhiro
Hatano Mutsuko
Kawabe Ushio
Nakane Hideaki
Nishino Toshikazu
Carroll J.
Hitachi , Ltd.
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