Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2006-11-07
2006-11-07
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S204000, C257S197000
Reexamination Certificate
active
07132344
ABSTRACT:
A bipolar junction transistor (BJT) structure and fabrication method are provided in which a doped polysilicon filled trench is utilized to form both the extrinsic base contact region and a vertical field plate. A sacrificial mandrel of dielectric material is formed over regions that will become the BJT active area. This allows the polysilicon filled trench to be extended above the original semiconductor substrate surface. In this way, the base-collector and emitter-base junctions are both self-aligned to the field plate trench. The field plate is utilized to control and shape the electric field in the base-collector depletion region, allowing heavier collector well doping for the same breakdown voltage. This results in improvement in both the breakdown/Ronratio and the fT*BVcboproduct.
REFERENCES:
patent: 6946348 (2005-09-01), Zeng
“A New Trench Bipolar Transistor for RF Applications”, Raymond J. E. Hueting et al., IEEE Transactions on Electron Devices, vol. 51, No. 7, Jul. 2004, pp. 1108-1113.
Dang Phuc T.
National Semiconductor Corporation
Stallman & Pollock LLP
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